Panasonic 2SD1450 User Manual

Silicon npn epitaxial planar type, Transistors, For low-frequency amplification ■ features

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Transistors

1

Publication date: April 2003

SJC00222BED

2SD1450

Silicon NPN epitaxial planar type

For low-frequency amplification

■ Features

• Optimum for high-density mounting
• Allowing supply with the radial taping
• Low collector-emitter saturation voltage V

CE(sat)

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

25

V

Collector-emitter voltage (Base open)

V

CEO

20

V

Emitter-base voltage (Collector open)

V

EBO

12

V

Collector current

I

C

0.5

A

Peak collector current

I

CP

1

A

Collector power dissipation

P

C

300

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

= 10 µA, I

E

= 0

25

V

Collector-emitter voltage (Base open)

V

CEO

I

C

= 1 mA, I

B

= 0

20

V

Emitter-base voltage (Collector open)

V

EBO

I

E

= 10 µA, I

C

= 0

12

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

= 25 V, I

E

= 0

100

nA

Forward current transfer ratio

*1

h

FE1

*2

V

CE

= 2 V, I

C

= 0.5 A

200

800

h

FE2

V

CE

= 2 V, I

C

= 1 A

60

Collector-emitter saturation voltage

*1

V

CE(sat)

I

C

= 500 mA, I

B

= 20 mA

0.13

0.40

V

Base-emitter saturation voltage

*1

V

BE(sat)

I

C

= 500 mA, I

B

= 20 mA

1.2

V

Transition frequency

f

T

V

CB

= 10 V, I

E

= −50 mA, f = 200 MHz

200

MHz

Collector output capacitance

C

ob

V

CB

= 10 V, I

E

= 0, f = 1 MHz

10

pF

(Common base, input open circuited)

ON resistance

*3

R

on

0.6

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

4.0

±0.2

0.75 max.

2.0

±0.2

0.45

(2.5) (2.5)

0.7

±0.1

2

3

1

+0.20

–0.10

0.45

+0.20

–0.10

7.6

3.0

±

0.2

(0.8)

(0.8)

15.6

±

0.5

1: Emitter
2: Collector
3: Base

NS-B1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

*3: R

on

Measurement circuit

Rank

R

S

T

No rank

h

FE1

200 to 350

300 to 500

400 to 800

200 to 800

V

V

1 k

R

on

= V

B

× 1 000 (Ω)

V

A

− V

B

f

= 1 kHz

V

= 0.3 V

V

B

I

B

= 1 mA

V

A

This product complies with the RoHS Directive (EU 2002/95/EC).

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