NXP Semiconductors Logic level TOPFET PIP3119-P - Manual (Page 3)

Philips Semiconductors Product specification
Logic level TOPFET PIP3119-P
OUTPUT CHARACTERISTICS
Limits are for -40˚C
≤
T
mb
≤
150˚C; typicals are for T
mb
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Off-state V
IS
= 0 V
V
(CL)DSS
Drain-source clamping voltage I
D
= 10 mA 50 - - V
I
DM
= 4 A; t
p
≤
300
µ
s;
δ ≤
0.01 50 60 70 V
I
DSS
Drain source leakage current V
DS
= 40 V - - 100
µ
A
T
mb
= 25˚C - 0.1 10
µ
A
On-state V
IS
≥
4.4 V; t
p
≤
300
µ
s;
δ ≤
0.01
R
DS(ON)
Drain-source resistance I
DM
= 10 A - - 52 m
Ω
T
mb
= 25˚C - 22 28 m
Ω
OVERLOAD CHARACTERISTICS
V
IS
= 5 V; T
mb
= 25˚C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Short circuit load
I
D
Drain current limiting V
DS
= 13 V 28.5 43 57 A
4.4 V
≤
V
IS
≤
5.5 V; 21 - 65 A
-40˚C
≤
T
mb
≤
150˚C
Overload protection
P
D(TO)
Overload power threshold device trips if P
D
> P
D(TO)
75 185 250 W
T
DSC
Characteristic time which determines trip time 1 200 380 600
µ
s
Overtemperature protection
T
j(TO)
Threshold junction 150 170 - ˚C
temperature 2
1 Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
≈
T
DSC
/ ln[ P
D
/ P
D(TO)
].
2 This is independent of the dV/dt of input voltage V
IS
.
May 2001 3 Rev 1.000