NXP Semiconductors PBLS4004D User Manual

Pbls4004d, Product profile, 40 v pnp biss loadswitch

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1.

Product profile

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor and NPN Resistor-

Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.

1.2 Features

Low V

CEsat

(BISS) and resistor-equipped transistor in one package

Low threshold voltage (< 1 V) compared to MOSFET

Low drive power required

Space-saving solution

Reduction of component count

1.3 Applications

Supply line switches

Battery charger switches

High-side switches for LEDs, drivers and backlights

Portable equipment

1.4 Quick reference data

[1]

Device mounted on a ceramic Printed-Circuit Board (PCB), Al

2

O

3

, standard footprint.

[2]

Pulse test: t

p

300

µ

s;

δ ≤

0.02.

PBLS4004D

40 V PNP BISS loadswitch

Rev. 03 — 6 January 2009

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low V

CEsat

transistor

V

CEO

collector-emitter voltage

open base

-

-

40

V

I

C

collector current

[1]

-

-

1

A

R

CEsat

collector-emitter saturation
resistance

I

C

=

500 mA;

I

B

=

50 mA

[2]

-

240

340

m

TR2; NPN resistor-equipped transistor

V

CEO

collector-emitter voltage

open base

-

-

50

V

I

O

output current

-

-

100

mA

R1

bias resistor 1 (input)

15.4

22

28.6

k

R2/R1

bias resistor ratio

0.8

1

1.2

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