NXP Semiconductors PBLS4004D - Manual (Page 6)

PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 6 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
7. Characteristics
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical
values
006aaa464
10
1
10 2
10 3
Z th(j-a)
(K/W)
10
− 5 10 10
− 2 10
− 4 10 2 10
− 1
t
p
(s)
10
− 3 10 3 1
0.75
0.5
0.33
0.2
0.1
δ = 1
0.05
0.02
0.01
0
Table 7. Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
TR1; PNP low V
CEsat
transistor
I
CBO
collector-base cut-off
current V
CB
=
−
40 V; I
E
= 0 A - -
−
0.1
µ
A
V
CB
=
−
40 V; I
E
= 0 A;
T
j
= 150
°
C
- -
−
50
µ
A
I
CES
collector-emitter
cut-off current V
CE
=
−
30 V; V
BE
= 0 V - -
−
0.1
µ
A
I
EBO
emitter-base cut-off
current V
EB
=
−
5 V; I
C
= 0 A - -
−
0.1
µ
A
h
FE
DC current gain V
CE
=
−
5 V; I
C
=
−
1 mA 300 - -
V
CE
=
−
5 V; I
C
=
−
100 mA [1] 300 - 800
V
CE
=
−
5 V; I
C
=
−
500 mA [1] 215 - -
V
CE
=
−
5 V; I
C
=
−
1 A [1] 150 - -
V
CEsat
collector-emitter
saturation voltage I
C
=
−
100 mA; I
B
=
−
1 mA -
−
80
−
140 mV
I
C
=
−
500 mA; I
B
=
−
50 mA [1] -
−
120
−
170 mV
I
C
=
−
1 A; I
B
=
−
100 mA [1] -
−
220
−
310 mV
R
CEsat
collector-emitter
saturation resistance I
C
=
−
500 mA; I
B
=
−
50 mA [1] - 240 340 m
Ω
V
BEsat
base-emitter
saturation voltage I
C
=
−
1 A; I
B
=
−
50 mA [1] - -
−
1.1 V
V
BEon
base-emitter
turn-on voltage V
CE
=
−
5 V; I
C
=
−
1 A [1] - -
−
1 V