Pbls4004d, Nxp semiconductors – NXP Semiconductors PBLS4004D User Manual
Page 3
PBLS4004D_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 6 January 2009
3 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3]
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
P
tot
total power dissipation
T
amb
≤
25
°
C
-
250
mW
-
350
mW
-
400
mW
TR2; NPN resistor-equipped transistor
V
CBO
collector-base voltage
open emitter
-
50
V
V
CEO
collector-emitter voltage
open base
-
50
V
V
EBO
emitter-base voltage
open collector
-
10
V
V
I
input voltage
positive
-
+40
V
negative
-
−
10
V
I
O
output current
-
100
mA
I
CM
peak collector current
single pulse; t
p
≤
1 ms
-
100
mA
P
tot
total power dissipation
T
amb
≤
25
°
C
-
200
mW
Per device
P
tot
total power dissipation
T
amb
≤
25
°
C
-
400
mW
-
530
mW
-
600
mW
T
j
junction temperature
-
150
°
C
T
amb
ambient temperature
−
65
+150
°
C
T
stg
storage temperature
−
65
+150
°
C
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit