C&H Technology CPV364M4KPbF - Manual (Page 2)

Document Number: 94488 For technical questions, contact: [email protected] www.vishay.com
Revision: 01-Sep-08 1
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
CPV364M4KPbF
Vishay High Power Products
FEATURES
• Short circuit rated ultrafast: Optimized for high
speed > 5.0 kHz, and short circuit rated to 10 µs
at 125 °C, V
GE
= 15 V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED ® soft ultrafast diodes
• Totally lead (Pb)-free and RoHS compliant
• Designed and qualified for industrial level
DESCRIPTION
The IGBT technology is the key to Vishay´s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
Notes
(1) Repetitive rating; V
GE
= 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2) V
CC
= 80 % (V
CES
), V
GE
= 20 V, L = 10 µH, R
G
= 10 Ω (see fig. 19)
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
I
RMS
per phase (3.1 kW total)
with T
C
= 90 °C
11 A
RMS
T
J
125 °C
Supply voltage 360 Vdc
Power factor 0.8
Modulation depth (see fig. 1) 115 %
V
CE(on)
(typical)
at I
C
= 13 A, 25 °C
1.8 V
IMS-2
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 24
A
T
C
= 100 °C 13
Pulsed collector current I
CM
(1) 48
Clamped inductive load current I
LM
(2) 48
Short circuit withstand time t
SC
T
C
= 100 °C 9.3 µs
Gate to emitter voltage V
GE
± 20 V
Isolation voltage V
ISOL
t = 1 min, any terminal to case 2500 V
RMS
Maximum power dissipation, each IGBT P
D
T
C
= 25 °C 63
W
T
C
= 100 °C 25
Operating junction and storage temperature range T
J
, T
Stg
- 55 to + 150
°C
Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300
Mounting torque 6-32 or M3 screw
5 to 7
(0.55 to 0.8)
lbf
⋅ in
(N
⋅ m)