C&H Technology CPV364M4KPbF - Manual (Page 6)

Document Number: 94488 For technical questions, contact: [email protected] www.vishay.com
Revision: 01-Sep-08 5
CPV364M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec) 1
th
J
C
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
Therm
al Respon
s
e (Z
)
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
1 10 100
0
500
1000
1500
2000
2500
3000
V , Collector-to-Emitter Voltage (V)
C,
Ca
p
a
c
it
a
n
c
e
(
p
F
)
CE
V
C
C
C =
=
=
= 0V,
C
C
C f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge gc , ce
res gc
oes ce gc
C ies
C oes
C res
0 20 40 60 80 100 120
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V ,
G
a
te
-t
o-
Em
it
te
r Vol
tage (
V
)
G
GE
V = 400V
I = 13A
CC
C
0 10 20 30 40 50
0.5
1.0
1.5
R , Gate Resistance ( Ω)
Total Switching Losses (m
J)
G
V = 480V
V = 15V
T = 25 C
I = 13A
CC
GE
J
C
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
T
o
tal
S
w
it
chi
n
g Losses (m
J)
J
°
R = Ohm
V = 15V
V = 480V G
GE
CC
I = A 26 C
I = A 13 C
I = A 6.5 C
10 Ω