C&H Technology VS-UFB80FA20 - Manual (Page 4)

VS-UFB80FA20
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Vishay Semiconductors
Revision: 26-Oct-11 3 Document Number: 93607
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Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
1
10
T
J
= 175 °C
T
J
= 25 °C
0
V
F
- Forward Voltage Drop (V)
I F
- Instantaneous Forwar
d Current (A) 100
1000
0.5 1.5 2.5 1 2
0.01
0.1
1
10
100
0 100 150
V
R
- Reverse Voltage (V)
I R
- Re
ver
se Current (µA)
200 50
0.001
1000
T
J
= 175 °C
T
J
= 25 °C
Reverse Voltage - V (V)
Junction Capacitance - C
T
(pF)
10
100
1000
1 10 100 1000
T
J
= 25 °C
Z
thJC
- Thermal Impedance (°C/W)
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
t
1
- Rectangular Pulse Duration (s)
DC
Single pulse
(thermal resistance)
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C