Vs-ufb80fa20, Vishay semiconductors – C&H Technology VS-UFB80FA20 User Manual
Page 5
VS-UFB80FA20
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Vishay Semiconductors
Revision: 26-Oct-11
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Document Number: 93607
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
DC
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
Square Wave (D = 0.5)
Rated V
R
applied
I
F(AV)
- Average Forward Current (A)
Average
Power
Loss (W)
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
RMS Limit
D = 0.05
D = 0.10
D = 0.20
D = 0.50
D = 0.33
DC
10
100
1000
20
30
40
50
60
70
T
J
= 125 ˚ C
T
J
= 25 ˚ C
I
f
= 30 A
V
rr
= 100 V
dI
F
/dt (A/μs)
t
rr
(ns)
dI
F
/dt (A/μs)
Q
rr
(nC)
0
50
100
150
200
250
300
350
400
450
500
550
T
J
= 125 °C
T
J
= 25 °C
I
f
= 30 A
V
rr
= 100 V
100
1000