Vishay high power products – C&H Technology GA75TS12UPbF User Manual
Page 6
Document Number: 94427
For technical questions, contact: [email protected]
www.vishay.com
Revision: 18-Jan-08
5
GA75TS120UPbF
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
Vishay High Power Products
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 12 - Reverse Bias SOA
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 14 - Typical Stored Charge vs. dI
F
/dt
10
20
30
40
50
R
G
- Gate Resistance (
Ω)
Total Switchin
g
Losses (mJ)
18
20
22
24
26
Total Switching Losses (mJ)
0
30
60
90
120
150
1
10
100
T
J
- Junction Temperature (°C)
I
C
= 75 A
I
C
= 25 A
I
C
= 150 A
Total Switching Losses (mJ)
0
20
40
80
120
160
0
20
30
50
70
I
C
- Collector Current (A)
10
40
60
60
100
140
R
G1
= 15
Ω
R
G2
= 0
Ω
T
C
= 125 °C
V
CC
= 720 V
V
GE
= 15 V
I
C
- Collector Current (A)
0
100
200
0
400
800
1400
V
CE
- Collector to Emitter Voltage (V)
Safe operating area
V
GE
= 20 V
T
J
= 125 °C
V
CE
measured at terminal (peak voltage)
200
600
1000
1200
150
100
50
1
100
10
1000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
T
J
= 125 °C
T
J
= 25 °C
500
1000
1500
2000
0
4000
8000
12 000
16 000
dI
F
/dt (A/µs)
Q
rr
(nC)
V
R
= 720 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 150 A
I
F
= 75 A
I
F
= 37 A