C&H Technology GA75TS12UPbF - Manual (Page 8)

Document Number: 94427 For technical questions, contact: [email protected] www.vishay.com
Revision: 18-Jan-08 7
GA75TS120UPbF
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
Vishay High Power Products
Fig. 17e - Macro Waveforms for Figure 18a‘s Test Circuit
Fig. 18 - Clamped Inductive Load Test Circuit Fig. 19 - Pulsed Collector Current Test Circuit
ORDERING INFORMATION TABLE
V
G
Gate signal
device under test
Current D.U.T.
Voltage in D.U.T.
Current in D1
t0 t1 t2
D.U.T.
50 V
L
V
C
* 1000 V
6000 µF
100 V
* Driver same type as D.U.T.; V
C
= 80 % of V
CE
(max)
Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I
d
600 V
4 x I
C
at 25 °C
0 - 600 V
R
L
= =
Device code
1 5 2 4
1 - Insulated gate bipolar transistor (IGBT)
2 - Generation 4, IGBT silicon, DBC construction
3 - Current rating (75 = 75 A)
4 - Circuit configuration (T = Half-bridge)
5 - Package indicator (INT-A-PAK)
6 - Voltage rating (120 = 1200 V)
7 - Speed/type (U = Ultrafast)
8 - PbF = Lead (Pb)-free
6 3 7
G A 75 T S 120 U PbF
8