C&H Technology VS-GA50TP60S - Manual (Page 5)

VS-GA50TP60S
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Vishay Semiconductors
Revision: 27-Nov-12 4 Document Number: 94809
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
V
CE
(V)
I C
(A)
0
20
40
60
80
100
120
0 100 200 300 400 500 600 700
Module
V
GE
= ± 15 V
T
J
= 125 °C
R
G
= 3.3 Ω
Z thJC
(K/W)
t (s)
IGBT
10
-1
10 0
10
-2
10 0 10 1 10 -1 10 -2
10 -3
V
F
(V)
I F
(A)
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2
25 °C
125 °C
I
F
(A)
E (mJ)
0
0 25 50 75 100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
GE
= - 15 V
T
J
= 125 °C
R
g
= 3.3 Ω
V
CC
= 300 V
E
rec