Vs-ga50tp60s, Vishay semiconductors, Circuit configuration – C&H Technology VS-GA50TP60S User Manual
Page 6
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VS-GA50TP60S
www.vishay.com
Vishay Semiconductors
Revision: 27-Nov-12
5
Document Number: 94809
For technical questions within your region:
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 9 - Diode Switching Loss vs. R
G
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
R
g
(
Ω)
E (mJ)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
5
10
15
20
25
30
35
V
GE
= - 15 V
T
J
=
125 °C
I
F
= 50 A
V
CC
= 300 V
E
rec
Z
thJC
(K/W)
t (s)
10
-1
10
0
10
1
10
-2
10
0
10
1
10
-1
10
-2
10
-3
Diode
1
6
7
3
2
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95524
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