Vs-ga50tp60s, Vishay semiconductors, Circuit configuration – C&H Technology VS-GA50TP60S User Manual

Page 6

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VS-GA50TP60S

www.vishay.com

Vishay Semiconductors

Revision: 27-Nov-12

5

Document Number: 94809

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Fig. 9 - Diode Switching Loss vs. R

G

Fig. 10 - Diode Transient Thermal Impedance

CIRCUIT CONFIGURATION

R

g

(

Ω)

E (mJ)

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0

5

10

15

20

25

30

35

V

GE

= - 15 V

T

J

=

125 °C

I

F

= 50 A

V

CC

= 300 V

E

rec

Z

thJC

(K/W)

t (s)

10

-1

10

0

10

1

10

-2

10

0

10

1

10

-1

10

-2

10

-3

Diode

1

6
7

3

2

5
4

LINKS TO RELATED DOCUMENTS

Dimensions

www.vishay.com/doc?95524

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