Vishay semiconductors, Preliminary, Igbt electrical specifications (t – Vishay VS-GT100TP060N User Manual

Page 2: Switching characteristics, Diode electrical specifications (t

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Preliminary

VS-GT100TP060N

www.vishay.com

Vishay Semiconductors

Revision: 13-Dec-11

2

Document Number: 93799

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IGBT ELECTRICAL SPECIFICATIONS (T

C

= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS MIN.

TYP.

MAX.

UNITS

Collector to emitter breakdown voltage

V

(BR)CES

T

J

= 25 °C

600

-

-

V

Collector to emitter saturation voltage

V

CE(sat)

V

GE

= 15 V, I

C

= 100 A, T

J

= 25 °C

-

1.65

2.10

V

GE

= 15 V, I

C

= 100 A, T

J

= 175 °C

-

2.00

-

Gate to emitter threshold voltage

V

GE(th)

V

CE

= V

GE

, I

C

= 1.0 mA, T

J

= 25 °C

4.0

4.4

6.5

Collector cut-off current

I

CES

V

CE

= V

CES

, V

GE

= 0 V, T

J

= 25 °C

-

-

5.0

mA

Gate to emitter leakage current

I

GES

V

GE

= V

GES

, V

CE

= 0 V, T

J

= 25 °C

-

-

400

nA

SWITCHING CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS MIN.

TYP.

MAX.

UNITS

Turn-on delay time

t

d(on)

V

CC

= 300 V, I

C

= 100 A, R

g

= 2.2

,

V

GE

= ± 15 V, T

J

= 25 °C

-

106

-

ns

Rise time

t

r

-

49

-

Turn-off delay time

t

d(off)

-

102

-

Fall time

t

f

-

85

-

Turn-on switching loss

E

on

-

0.46

-

mJ

Turn-off switching loss

E

off

-

0.95

-

Turn-on delay time

t

d(on)

V

CC

= 300 V, I

C

= 100 A, R

g

= 2.2

,

V

GE

= ± 15 V, T

J

= 125 °C

-

112

-

ns

Rise time

t

r

-

62

-

Turn-off delay time

t

d(off)

-

126

-

Fall time

t

f

-

109

-

Turn-on switching loss

E

on

-

0.78

-

mJ

Turn-off switching loss

E

off

-

1.73

-

Input capacitance

C

ies

V

GE

= 0 V, V

CE

= 30 V, f = 1.0 MHz

-

7.71

-

nF

Output capacitance

C

oes

-

0.53

-

Reverse transfer capacitance

C

res

-

0.23

-

SC data

I

SC

t

p

 5 μs, V

GE

= 15 V, T

J

= 125 °C,

V

CC

= 360 V, V

CEM

 1200 V

-

900

-

A

Stray inductance

L

CE

-

-

30

nH

Module lead resistance, terminal to chip

R

CC’+EE’

-

0.75

-

m

DIODE ELECTRICAL SPECIFICATIONS (T

C

= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Forward voltage

V

F

I

F

= 100 A

T

J

= 25 °C

-

1.40

1.80

V

T

J

= 125 °C

-

1.40

-

Reverse recovery charge

Q

rr

I

F

= 100 A, V

R

= 600 V,

R

G

= 5.6

V

GE

= - 15 V

T

J

= 25 °C

-

5.5

-

μC

T

J

= 125 °C

-

7.3

-

Peak reverse recovery current

I

rr

T

J

= 25 °C

-

68

-

A

T

J

= 125 °C

-

88

-

Reverse recovery energy

E

rec

T

J

= 25 °C

-

0.89

-

mJ

T

J

= 125 °C

-

1.71

-

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