Vishay semiconductors, Preliminary, Circuit configuration – Vishay VS-GT100TP060N User Manual
Page 5
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Preliminary
VS-GT100TP060N
www.vishay.com
Vishay Semiconductors
Revision: 13-Dec-11
5
Document Number: 93799
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 9 - Diode Switching Loss vs. R
G
Fig. 10 - Forward Characteristics of Diode
CIRCUIT CONFIGURATION
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
50
E (mJ)
R
G
(
Ω)
E
REC
V
CC
= 300 V
I
F
= 100 A
V
GE
= - 15 V
T
J
= 125 °C
0.01
0.1
1
0.001
0.01
0.1
1
10
t (s)
Diode
Z
thJC
(K/W)
1
6
7
3
2
5
4
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