C&H Technology GB15XP120KTPbF - Manual (Page 6)

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Revision: 03-Aug-10 [email protected] , [email protected] , [email protected] 5
GB15XP120KTPbF
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED ® Diodes, 15 A
Vishay Semiconductors
Fig. 9 - Typical Capacitance vs. V
CE
V
GE
= 0 V; f = 1 MHz
Fig. 10 - Typical Gate Charge vs. V
GE
I
CE
= 15 A
Fig. 11 - Maximum DC Collector Current vs.
Case Temperature
Fig. 12 - Power Dissipation vs. Case Temperature
(IGBT only)
Fig. 13 - Forward SOA
T
C
= 25 °C, T
J
 150 °C
Fig. 14 - Reverse BIAS SOA
T
J
= 150 °C, V
GE
= 15 V
0 10 20 30 40
10
100
1000
10000
Vce (V)
Cap
a
ci
tance (pF)
Cies
Coes
Cres
Q
G
, Total Gate Charge (nC)
0 20 40 60 80 100
0
4
8
12
16
600V
V
GE
(V)
0 40 80 120 160
0
8
16
24
32
Ic
(
A
)
Tc (°C)
0 40 80 120 160
0
30
60
90
120
Tc (°C)
Pto
t (W)
1 10 100 1000 10000
0.01
0.1
1
10
100
Vce (V)
Ic
(
A
)
20 µs
100 µs
1 ms
DC
10 ms
10 100 1000 10000
1
10
100
Vce (V)
Ic
(
A
)