Vishay semiconductors, Diodes, 15 a – C&H Technology GB15XP120KTPbF User Manual
Page 7
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Document Number: 93913
6
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Revision: 03-Aug-10
GB15XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
®
Diodes, 15 A
Fig. 15 - Typical Transfer Characteristics
V
CE
= 50 V; t
p
= 10 μs
Fig. 16 - Typical Diode Forward Characteristics
t
p
= 80 μs
Fig. 17 - Typical Diode I
rr
vs. I
F
T
J
= 125 °C
Fig. 18 - Typical Diode I
rr
vs. R
g
T
J
= 125 °C; I
F
= 10 A
Fig. 19 - Typical Diode I
rr
vs. dI
F
/dt; V
CC
= 600 V;
V
GE
= 15 V; I
CE
= 10 A, T
J
= 125 °C
0
4
8
12
16
0
40
80
120
160
Vge (V)
Ice (A)
Tj = 25°C
Tj = 125°C
0
1
2
3
4
0
10
20
30
40
50
Vf (V)
If
(
A
)
Tj = 25°C
Tj = 125°C
5
10
15
20
25
30
35
5
15
25
35
45
55
If (A)
Irr (
A
)
Rg=4.7
Ω
Rg=
10
Ω
Rg=
22Ω
Rg=47
Ω
0
10
20
30
40
50
15
20
25
30
35
40
45
Rg ( )
Irr (
A
)
400
550
700
850
1000
1150
1300
15
20
25
30
35
40
45
dif/dt (A/µs)
Irr (
A
)