C&H Technology GB75DA120UP - Manual (Page 6)

Document Number: 93011 For technical questions, contact: [email protected] www.vishay.com
Revision: 23-Apr-09 5
GB75DA120UP
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
Vishay High Power Products
Fig. 11 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, I
C
= 75 A, L = 500 µH,
V
CC
= 600 V, V
GE
= 15 V
Fig. 12 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 µH, V
CC
= 600 V,
R
g
= 5
Ω, V
GE
= 15 V
Fig. 13 - Typical t
rr
diode vs. dI
F
/dt
V
RR
= 200 V, I
F
= 50 A
Fig. 14 - Typical I
rr
diode vs. dI
F
/dt
V
RR
= 200 V, I
F
= 50 A
Fig. 15 - Maximum Thermal Impedance Z
thJC
Characteristics (IGBT)
Energy (mJ)
R
G
( Ω)
0 10 20 30 40 50
0
14
6
10
8
12
4
2
E
on
E
off
Switching Time (µs)
R
G
( Ω)
0 20 30 10 40 50
10
10 000
1000
100
t
d(on)
t
d(off)
t
f
t
r
t rr
(ns)
dI
F
/dt (A/µs)
100 1000
70
250
110
150
190
210
230
90
130
170
T
J
= 125 °C
T
J
= 25 °C
I rr
(A)
dI
F
/dt (A/µs)
100 1000
0
40
10
20
30
35
5
15
25
T
J
= 125 °C
T
J
= 25 °C
0.0001
0.01
0.1
0.001
1
0.00001 0.0001 0.001 0.01 0.1
Rectangular Pulse Duration (t
1
)
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
1
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01