C&H Technology GB75DA120UP - Manual (Page 7)

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6 Revision: 23-Apr-09
GB75DA120UP
Vishay High Power Products Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
Fig. 16 - Maximum Thermal Impedance Z
thJC
Characteristics (diode)
Fig. 17a - Clamped Inductive Load Test Circuit Fig. 17b - Pulsed Collector Current Test Circuit
Fig. 18a - Switching Loss Test Circuit
0.001
0.1
0.01
1
0.00001 0.0001 0.001 0.01 0.1
Rectangular Pulse Duration (t
1
)
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
1
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
* Driver same type as D.U.T.; V
C
= 80 % of V
ce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
50 V
1000 V
D.U.T. L
V
C
*
2
1
R
g
V
CC D.U.T.
R =
V
CC
I CM
+
-
L
Diode clamp/
D.U.T.
D.U.T./
driver
- 5 V
+ -
R
g
V
CC
+
-