Vishay VS-GT50TP60N - Manual (Page 3)

Preliminary
VS-GT50TP60N
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Vishay Semiconductors
Revision: 22-Dec-11 3 Document Number: 94666
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
G
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction temperature range T
J
- - 175 °C
Storage temperature range T
Stg
- 40 - 125 °C
Junction to case
per ½ module
IGBT
R
thJC
- - 0.72
K/W Diode - - 1.02
Case to sink (Conductive grease applied) R
thCS
- 0.05 -
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight Weight of module - 150 - g
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5
25 °C
175 °C
V
GE
= 15 V
V
CE
(V)
I C
(A)
V
GE
(V)
I C
(A)
0
10
20
30
40
50
60
70
80
90
100
4 5 6 7 8 9 10 11
175 °C
25 °C
V
CE
(V) = 50 V
E (mJ)
I
C
(A)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 10 20 30 40 50 60 70 80 90 100
V
GE
= ± 15 V
T
J
= 125 °C
R
G
= 3.3 Ω
V
CC
= 300 V
E
on
E
off
R
G
( Ω)
E (mJ)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 5 10 15 20 25 30 35
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 50 A
V
CC
= 300 V
E
on
E
off