Vishay VS-GT50TP60N - Manual (Page 5)

Preliminary
VS-GT50TP60N
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Vishay Semiconductors
Revision: 22-Dec-11 5 Document Number: 94666
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Fig. 9 - Diode Switching Loss vs. R
G
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
R
G
( Ω)
E (mJ)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0 5 10 15 20 25 30 35
E
rec
V
GE
= - 15 V
T
J
= 125 °C
I
F
= 50 A
V
CC
= 300 V
t (s)
Z
thJC
(K/W)
0.01
0.1
1
10
0.001 0.01 0.1 1 10
Diode
i: 1 2 3 4
r
i
i
[s]: 0.01 0.02 0.05 0.1
[K/W]: 0.0612 0.3366 0.3264 0.2958
τ
1
6
7
3 2
5
4