Vishay semiconductors – C&H Technology GB75SA120UP User Manual
Page 3
GB75SA120UP
www.vishay.com
Vishay Semiconductors
Revision: 06-Oct-11
2
Document Number: 93124
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SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
TYP.
MAX.
UNITS
Total gate charge (turn-on)
Q
g
I
C
= 50 A, V
CC
= 600 V, V
GE
= 15 V
-
690
-
nC
Gate to emitter charge (turn-on)
Q
ge
-
65
-
Gate to collector charge (turn-on)
Q
gc
-
250
-
Turn-on switching loss
E
on
I
C
= 75 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH
Energy losses
include tail and
diode recovery
(see fig. 18)
-
1.53
-
mJ
Turn-off switching loss
E
off
-
1.76
-
Total switching loss
E
tot
-
3.29
-
Turn-on switching loss
E
on
I
C
= 75 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 125 °C
-
2.49
-
Turn-off switching loss
E
off
-
3.45
-
Total switching loss
E
tot
-
5.94
-
Turn-on delay time
t
d(on)
-
281
-
ns
Rise time
t
r
-
45
-
Turn-off delay time
t
d(off)
-
300
-
Fall time
t
f
-
126
-
Reverse bias safe operating area
RBSOA
T
J
= 150 °C, I
C
= 200 A, R
g
= 22
V
GE
= 15 V to 0 V, V
CC
= 900 V,
V
P
= 1200 V, L = 500 μH
Fullsquare
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN. TYP. MAX.
UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 40
-
150
°C
Junction to case
R
thJC
-
-
0.19
°C/W
Case to sink per module
R
thCS
-
0.05
-
Mounting torque, 6-32 or M3 screw
-
-
1.3
Nm
Weight
-
30
-
g