C&H Technology GB75SA120UP - Manual (Page 4)

GB75SA120UP
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Vishay Semiconductors
Revision: 06-Oct-11 3 Document Number: 93124
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Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Collector Current Characteristics
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 5 - Typical IGBT Threshold Voltage
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
0 20 40 60 80 100 120 140
0
160
100
120
140
20
40
60
80
93124_01
I C
(A)
V
CE
(V)
10 100 1000 10 000
1
1000
10
100
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I C
(A)
V
CE
(V)
0 2 4 6 1 3 5
0
200
50
100
150
T
J
= 125 °C
T
J
= 25 °C
93124_03
I CE
S
(mA)
V
CES
(V)
0 200 400 600 800 1000 1200
0.0001
10
0.01
1
0.001
0.1
T
J
= 125 °C
T
J
= 25 °C
93124_04
V
geth
(V)
I
C
(mA)
0.0002 0.0004 0.0006 0.0008 0.001
3.0
6.0
4.0
4.5
5.0
5.5
3.5
T
J
= 125 °C
T
J
= 25 °C
93124_05
V
CE
(V)
T
J
(°C)
25 50 75 125 100 150
2.0
4.5
3.0
3.5
4.0
2.5
100 A
75 A
27 A
93124_06