Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GT100TP120N User Manual
Page 4
VS-GT100TP120N
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Vishay Semiconductors
Revision: 06-Aug-12
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Document Number: 93800
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
G
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction temperature range
T
J
-
-
175
°C
Storage temperature range
T
Stg
- 40
-
125
°C
Junction to case
per ½ module
IGBT
R
thJC
-
-
0.23
K/W
Diode
-
-
0.36
Case to sink (Conductive grease applied)
R
thCS
-
0.05
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
Weight of module
-
150
-
g
0
25
50
75
100
125
150
175
200
0
0.5
1
1.5
2
2.5
3
3.5
4
I
C
(A)
V
CE
(V)
25 °C
175 °C
V
GE
= 15 V
0
25
50
75
100
125
150
175
200
4
5
6
7
8
9
10
11
12
175 °C
25 °C
V
CE
= 50 V
V
GE
(V)
I
C
(A)
0
5
10
15
20
25
30
0
50
100
150
200
E
ON
E
OFF
V
CC
= 600 V
R
G
= 5.6
Ω
V
GE
= ± 15 V
T
J
= 125 °C
I
C
(A)
E (mJ)
E (mJ)
R
g
(
Ω)
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
E
OFF
E
ON
V
CC
= 600 V
I
C
= 100 A
V
GE
= ± 15 V
T
J
= 125 °C