Vishay semiconductors, Circuit configuration – C&H Technology VS-GT100TP120N User Manual
Page 6
Advertising
VS-GT100TP120N
www.vishay.com
Vishay Semiconductors
Revision: 06-Aug-12
5
Document Number: 93800
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 9 - Diode Switching Loss vs. R
G
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
E (mJ)
R
G
(
Ω)
0
1
2
3
4
5
6
0
10
20
30
40
50
60
E
REC
V
CC
= 600 V
I
F
= 100 A
V
GE
= - 15 V
T
J
= 125 °C
0.01
0.1
1
0.001
0.01
0.1
1
10
t (s)
Z
thJC
(K/W)
Diode
1
6
7
3
2
5
4
Advertising