Vishay semiconductors – C&H Technology VS-GT300FD060N User Manual
Page 2
VS-GT300FD060N
www.vishay.com
Vishay Semiconductors
Revision: 15-Oct-12
1
Document Number: 93569
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A
FEATURES
• Trench plus Field Stop IGBT technology
• FRED Pt
®
antiparallel and clamping diodes
• Short circuit capability
• Speed 4 kHz to 30 kHz
• Low stray internal inductances
• Low switching loss
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATION
• Solar converters
• Uninterruptable power supplies
BENEFITS
• Direct mounting on heatsink
• Low junction to case thermal resistance
• Easy paralleling due to positive T
C
of V
CE(sat)
Note
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
PRODUCT SUMMARY
V
CES
600 V
V
CE(ON)
typical
at I
C
= 300 A
1.72 V
I
C
at T
C
= 25 °C
379 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Operating junction temperature
T
J
175
°C
Storage temperature range
T
Stg
- 40 to 175
RMS isolation voltage
V
ISOL
T
J
= 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
3500
V
Collector to emitter voltage
V
CES
600
Gate to emitter voltage
V
GES
20
Pulsed collector current
I
CM
650
A
Clamped inductive load current
I
LM
650
Continuous collector current
I
C
T
C
= 25 °C
379
T
C
= 80 °C
288
Power dissipation
P
D
T
C
= 25 °C
1250
W
T
C
= 80 °C
792
D5 - D6 CLAMPING DIODE
Repetitive peak reverse voltage
V
RRM
600
V
Single pulse forward current
I
FSM
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C
800
A
Diode continuous forward current
I
F
T
C
= 25 °C
215
T
C
= 80 °C
161
Power dissipation
P
D
T
C
= 25 °C
500
W
T
C
= 80 °C
317
D - D2 - D3 - D4 AP DIODE
Single pulse forward current
I
FSM
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C
800
A
Diode continuous forward current
I
F
T
C
= 25 °C
215
T
C
= 80 °C
161
Power dissipation
P
D
T
C
= 25 °C
500
W
T
C
= 80 °C
317