C&H Technology VS-GT300FD060N - Manual (Page 6)

VS-GT300FD060N
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Vishay Semiconductors
Revision: 15-Oct-12 5 Document Number: 93569
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Fig. 7 - Typical Trench IGBT Zero Gate Voltage Collector Current
Fig. 8 - Typical Diode Forward Characteristics
Fig. 9 - Maximum Diode Forward Current vs. Case Temperature
Fig. 10 - Typical Diode Reverse Leakage Current
Fig. 11 - Typical Trench IGBT Energy Loss vs. I
C
,
T
J
= 125 °C, V
CC
= 300 V, R
g
= 10
, V
GE
= 15 V, L = 500 μH
Fig. 12 - Typical IGBT Switching Time vs. I
C
,
T
J
= 125 °C, V
CC
= 300 V, R
g
= 10 , V
GE
= 15 V, L = 500 μH
V
CES
(V)
I CE
S
(mA)
0.00001
0.0001
0.001
0.01
0.1
1
10
100
100 200 300 400 500 600
25 °C
125 °C
175 °C
V
FM
(V)
I F
(A)
0
50
100
150
200
250
300
350
400
450
500
550
600
0 0.5 1 1.5 2 2.5 3 3.5 4
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
I
F
- Continuous Forward Current (A)
Allowable
Case
Temperature
(°C)
0
20
40
60
80
100
120
140
160
180
200
0 40 80 120 160 200 240
DC
V
CES
(V)
I CE
S
(mA)
0.00001
0.0001
0.001
0.01
0.1
1
10
100
100 200 300 400 500 600
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
I
C
(A)
Ener
g
y (mJ)
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
40 60 80 100 120 140 160
E
ON
E
OFF
I
C
(A)
10
100
1000
40 60 80 100 120 140 160
S
witchin
g
time (ns)
t
d(on)
t
d(off)
t
r
t
f