Vishay SD703C..L Series - Manual (Page 7)

Document Number: 93179 For technical questions, contact: [email protected] www.vishay.com
Revision: 14-May-08 7
SD703C..L Series
Fast Recovery Diodes
(Hockey PUK Version),
700/790 A
Vishay High Power Products
Fig. 22 - Recovery Time Characteristics
Fig. 23 - Recovery Charge Characteristics
Fig. 24 - Recovery Current Characteristics
Fig. 25 - Recovery Time Characteristics
Fig. 26 - Recovery Charge Characteristics
Fig. 27 - Recovery Current Characteristics
2
2.5
3
3.5
4
4.5
5
5.5
6
10 100 1000
Rate Of Fall Of Forward Current - d i/ d t (A/ µs)
Ma
xi
m
u
m R
e
v
e
rs
e
R
e
c
o
v
e
ry
T
ime
-
T
rr
(µ
s)
500 A
SD703C..S20L Series
T = 150 °C; V > 100V
J r
I = 1000 A
Sine Pulse
150 A
FM
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300
Rate Of Fa ll Of Forwa rd Current - d i/ d t (A/ µs)
500 A
SD703C..S20L Series
T = 150 °C; V > 100V
J r
I = 1000 A
Sine Pulse
FM
150 A
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
harge -
Q
rr
(
A
)
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t -
Irr (
A
)
500 A
Ra te Of Fall Of Forward Current - d i/ dt (A/ µs)
SD703C..S20L Series
T = 150 °C; V > 100V
J r
I = 1000 A
Sine Pulse
150 A
FM
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
10 100 1000
Rate Of Fa ll Of Forward Current - di/d t (A/ µs)
Ma
x
im
u
m R
e
v
e
rs
e
R
e
c
o
v
e
ry
T
ime
-
T
rr
(µ
s)
500 A
SD703C..S30L Series
T = 150 °C; V > 100V
J r
I = 1000 A
Sine Pulse
FM
150 A
0
100
200
300
400
500
600
700
800
900
1000
1100
0 50 100 150 200 250 300
Ra te Of Fa ll Of Forwa rd Current - d i/ dt (A/ µs)
500 A
SD703C..S30L Series
T = 150 °C; V > 100V
J r
I = 1000 A
Sine Pulse
FM
150 A
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
arge -
Q
rr
(
µ
C
)
0
50
100
150
200
250
300
350
400
450
500
550
0 50 100 150 200 250 300
Ma
x
im
u
m
R
e
ve
rs
e
R
e
c
o
ver
y
C
u
rr
e
n
t -
Ir
r (
A
)
500 A
Ra te Of Fall Of Forward Current - d i/ dt (A/ µs)
SD703C..S30L Series
T = 150 °C; V > 100V
J r
I = 1000 A
Sine Pulse
150 A
FM