Rainbow Electronics ATtiny15L - Manual (Page 59)

59
ATtiny15L
1187E–AVR–06/02
High-voltage Serial
Programming
Characteristics Figure 32. High-voltage Serial Programming Timing
Low-voltage Serial
Downloading Both the program and data memory arrays can be programmed using the SPI bus while
RESET is pulled to GND. The serial interface consists of pins SCK, MOSI (input) and
MISO (output). See Figure 33. After RESET is set low, the Programming Enable instruc-
tion needs to be executed first before program/erase instructions can be executed.
Figure 33. Serial Programming and Verify
For the EEPROM, an auto-erase cycle is provided within the self-timed write instruction
and there is no need to first execute the Chip Erase instruction. The Chip Erase instruc-
tion turns the content of every memory location in both the program and EEPROM
arrays into $FF.
The program and EEPROM memory arrays have separate address spaces: $0000 to
$01FF for Program memory and $000 to $03F for EEPROM memory.
Table 26. High-voltage Serial Programming Characteristics, T
A
= 25 °C ± 10%,
V
CC
= 5.0V ± 10% (unless otherwise noted)
Symbol Parameter Min Typ Max Units
t
SHSL
SCI (PB3) Pulse Width High 25.0 ns
t
SLSH
SCI (PB3) Pulse Width Low 25.0 ns
t
IVSH
SDI (PB0), SII (PB1) Valid to SCI (PB3) High (8th
edge)
50.0 ns
t
SHIX
SDI (PB0), SII (PB1) Hold after SCI (PB3) High (8th
edge)
50.0 ns
t
SHOV
SCI (PB3) High (9th edge) to SDO (PB2) Valid 10.0 16.0 32.0 ns
SDI (PB0), SII (PB1)
SDO (PB2)
SCI (PB3)
t
IVSH t
SHSL
t
SLSH
t
SHIX
t
SHOV
Internal CK
1 2 7 8 9 10 15 16
VALID
PB5 (RESET)
GND
VCC
PB2
PB1
PB0
SCK
MISO
MOSI
2.7 - 5.5V
ATtiny15/L