Block diagram, Memory array – Rainbow Electronics AT45DB021B User Manual

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AT45DB021B

1937F–DFLSH–10/02

EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three
step Read-Modify-Write operation. Unlike conventional Flash memories that are
accessed randomly with multiple address lines and a parallel interface, the DataFlash
uses a SPI serial interface to sequentially access its data. DataFlash supports SPI mode
0 and mode 3. The simple serial interface facilitates hardware layout, increases system
reliability, minimizes switching noise, and reduces package size and active pin count.
The device is optimized for use in many commercial and industrial applications where
high density, low pin count, low voltage, and low power are essential. The device oper-
ates at clock frequencies up to 20 MHz with a typical active read current consumption of
4 mA.

To allow for simple in-system reprogrammability, the AT45DB021B does not require
high input voltages for programming. The device operates from a single power supply,
2.7V to 3.6V, for both the program and read operations. The AT45DB021B is enabled
through the chip select pin (CS) and accessed via a three-wire interface consisting of
the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).

All programming cycles are self-timed, and no separate erase cycle is required before
programming.

When the device is shipped from Atmel, the most significant page of the memory array
may not be erased. In other words, the contents of the last page may not be filled with
FFH.

Block Diagram

Memory Array

To provide optimal flexibility, the memory array of the AT45DB021B is divided into three
levels of granularity comprised of sectors, blocks and pages. The Memory Architecture
Diagram illustrates the breakdown of each level and details the number of pages per
sector and block. All program operations to the DataFlash occur on a page-by-page
basis; however, the optional erase operations can be performed at the block or page
level.

FLASH MEMORY ARRAY

PAGE (264 BYTES)

BUFFER 2 (264 BYTES)

BUFFER 1 (264 BYTES)

I/O INTERFACE

SCK

CS

RESET

VCC

GND

RDY/BUSY

WP

SO

SI

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