Rainbow Electronics Preliminary - Manual

1
Features
• Single Voltage Operation
– 5V Read
– 5V Programming
• Fast Read Access Time - 55 ns
• Internal Erase/Program Control
• Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 4K Words (8K bytes) Parameter Blocks
– One 240K Words (480K bytes) Main Memory Array Block
• Fast Sector Erase Time - 10 seconds
• Byte-by-Byte or Word-By-Word Programming - 10 µs Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low-Power Dissipation
– 50 mA Active Current
– 300 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49F004(T) and AT49F4096A(T) are 5-volt, 4-megabit Flash Memories orga-
nized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured
with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times
to 55 ns with power dissipation of just 275 mW. When deselected, the CMOS standby
current is less than 300 µA.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49F004/4096A locates the boot block at lowest order
addresses (“bottom boot”); the AT49F004T/4096AT locates it at highest order
addresses (“top boot”).
To allow for simple in-system reprogrammability, the AT49F004(T)/4096A(T) does not
require high input voltages for programming. Reading data out of the device is similar
to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus con-
tention. Reprogramming the AT49F004(T)/4096A(T) is performed by first erasing a
4-Megabit
(512K x 8/
256K x 16)
Flash Memory
AT49F004
AT49F004T
AT49F4096A
AT49F4096AT
Preliminary
Rev. 1167A–09/98
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
RESET Reset
RDY/BUSY Ready/Busy Output
I/O0 - I/O14 Data Inputs/Outputs
I/O15(A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE Selects Byte or Word Mode
NC No Connect
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