Littelfuse SP725 Series - Manual (Page 3)

© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13
TVS Diode Arrays
(SPA ® Diodes)
General Purpose ESD Protection - SP725 Series
ESD Capability
Table 1: ESD Test Conditions
Figure 3: High Current SCR Forward Voltage Drop Curve
ESD capability is dependent on the application and defined
test standard.The evaluation results for various test
standards and methods based on Figure 1 are shown in
Table 1.
The SP725 has a Level 4 HBM capability when tested as a
device to the IEC 61000-4-2 standard. Level 4 specifies a
required capability greater than 8kV for direct discharge and
greater than 15kV for air discharge.
For the “Modified” MIL-STD-3015.7 condition that is
defined as an “incircuit” method of ESD testing, the V+
and V- pins have a return path to ground and the SP725
ESD capability is typically greater than 25kV from 100pF
through 1.5kΩ . By strict definition of MIL-STD-3015.7 using
“pinto-pin” device testing, the ESD voltage capability is
greater than 10kV.
For the SP725 EIAJ IC121 Machine Model (MM) standard,
the ESD capability is typically greater than 2kV from 200pF
with no series resistance.
Standard Type/Mode R
D
C
D
±V
D
IEC 61000-4-2
(Level 4)
HBM, Air Discharge 330 Ω 150pF 15kV
HBM, Direct Discharge 330 Ω 150pF 8kV
MIL-STD-3015.7
Modified HBM 1.5k Ω 100pF 25kV
Standard HBM 1.5k Ω 100pF 10kV
EIAJ IC121 Machine Model 0k Ω 200pF 2kV
H.V.
SUPPLY
± V
D
IN
DUT
C D
R
1
IEC 61000-4-2: R 1 50 to 100M Ω
R
D
CHARGE
SWITCH
DISCHARGE
SWITCH
MIL-STD-3015.7: R 1 1 to 10M Ω
Figure 2: Low Current SCR Forward Voltage Drop Curve
Figure 1: Electrostatic Discharge Test
600 800 1000 1200
FORWARD SCR VOLTAGE DROP (mV)
200
160
120
80
40
0
T
A
= 25ºC
SINGLE PULSE
FOR
W
ARD SCR CURRENT (mA)
5
4
3
2
1
0
V FWD
IFWD
FORWARD SCR VOLTAGE DROP (V)
FOR
WA
RD SCR CURRENT (A)
0 1 2 3
EQUIV. SAT. ON
THRESHOLD ~ 1.1V
T
A
= 25°C
SINGLE PULSE