Diodes SBR1045SP5 - Manual (Page 2)

SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBR1045SP5
Document number: DS31370 Rev. 9 - 2
2 of 5
www.diodes.com
December 2012
© Diodes Incorporated
SBR1045SP5
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
45 V
RMS Reverse Voltage V
R(RMS)
32 V
Average Rectified Output Current I
O
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
180 A
Repetitive Peak Avalanche Power (1
μs, +25°C)
P
ARM
10,000 W
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance
Thermal Resistance Junction to Lead
Thermal Resistance Junction to Case (Note 4)
Thermal Resistance Junction to Ambient (Note 4)
Thermal Resistance Junction to Ambient (Note 5)
R θJL
R θJC
R θJA
R θJA
3
6
102
60
ºC/W
Operating Temperature Range
V R
≤ 80% V
RRM
T
J
-65 to +150
ºC V
R
≤ 50% V
RRM
≤180
DC Forward Mode ≤200
Storage Temperature Range T
STG
-65 to +175 ºC
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(BR)R
45 - - V I
R
= 0.5mA
Forward Voltage Drop V F
-
-
- -
0.49
0.47
0.51
0.55
0.53
V
I
F
= 8A, T
J
= +25ºC
I F = 10A, T J = +25ºC
I F = 10A, T J = +125ºC
Leakage Current (Note 6) I
R
-
-
- 0.03
-
17
0.45
18
100
mA
V
R
= 45V, T
J
= +25ºC
V
R
= 45V, T
J
= +100ºC
V
R
= 45V, T
J
= +150ºC
Typical Junction Capacitance C J
- 500 - pF f = MHz, I R = 4V
Notes: 4. FR-4 PCB, 2oz. Copper, minimum recommended pad layout per http://www.diodes.com.
5. Polymide PCB, 2oz. Copper, minimum recommended pad layout per http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.