Diodes SBR12U100P5 - Manual (Page 2)

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SBR12U100P5
Document number: DS31388 Rev. 4 - 2
2 of 5
www.diodes.com
October 2012
© Diodes Incorporated
SBR12U100P5
NEW PROD
UC
T
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
100 V
Average Rectified Output Current (See Figure 1) I
O
12 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
250 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 5) T
A
= +25°C R θJA 27 ºC/W
Typical Thermal Resistance Junction to Lead R θJL 3 ºC/W
Operating and Storage Temperature Range T J , T STG
-65 to +150 ºC
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop V F
-
0.49
-
-
-
0.51
0.71 V
I
F
= 5A, T
J
= +25ºC
I F = 5A, T J = +125ºC
I F = 12A, T J = +25ºC
Leakage Current (Note 6) I
R
-
-
11
0.25
40
mA
V
R
= 100V, T
J
= +25ºC
V
R
= 100V, T
J
= +125ºC
Notes: 5. Device mounted on Polymide PCB with 16x recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.