Diodes SBR2M30P1 - Manual (Page 2)

SBR2M30P1
Document number: DS30704 Rev. 7 - 2
2 of 4
www.diodes.com
October 2008
© Diodes Incorporated
SBR2M30P1
BR and PowerDI are registered trademarks of Diodes Incorporated.
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5) V
(BR)R
30 - - V I
R
= 200µA
Forward Voltage Drop V
F
-
-
-
-
-
- 0.26
0.37
0.42
0.16
0.29
0.36 0.30
0.41
0.46
0.19
0.32
0.39
V
I
F
= 0.1A, T
J
= 25ºC
I
F
= 1.0A, T
J
= 25ºC
I
F
= 2.0A, T
J
= 25ºC
I
F
= 0.1A, T
J
= 125ºC
I
F
= 1.0A, T
J
= 125ºC
I
F
= 2.0A, T
J
= 125ºC
Leakage Current (Note 5)
I
R
-
10
20
1.7
3.1
100
200
8
12
µA
µA
mA
mA
V
R
= 5V, T
J
= 25ºC
V
R
= 30V, T
J
= 25ºC
V
R
= 5V, T
J
= 125ºC
V
R
= 30V, T
J
= 125ºC
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Fig. 1 Forward Power Dissipation
0
0.2
0.4
0.6
0.8
1
1.2
0 1 2 3
I , AVERAGE FORWARD CURRENT (A)
F(AV)
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N
(W
)
D
Fig. 2 Typical Forward Characteristics
0.1
1
10
100
1,000
10,000
0 0.2 0.4 0.6 0.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
I
, INS
T
ANT
A
NEOUS
F
O
RW
ARD
C
URRENT
(
m
A)
F
T =100 C
A
°
T =175 C
A
°
T =25 C
A
°
T = -65 C
A
°
Fig. 3 Typical Reverse Characteristics
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0 5 10 15 20 25 30
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
I
, INS
T
A
N
T
A
NEOUS
REVER
SE CURR
ENT (
m
A)
R
T =175 C
A
°
T =25 C
A
°
T = -65 C
A
°
T =100 C
A
°
Fig. 4 Total Capacitance vs. Reverse Voltage
1
10
100
1,000
10,000
0 3 6 9 12 15 18 21 24 27 30
V , DC REVERSE VOLTAGE (V)
R
C
, T
O
T
A
L
CA
P
A
CIT
A
NCE
(
p
F
)
T
f = 1.0MHz
S