Diodes SBR30A60CTFP - Manual (Page 2)

SBR is a registered trademark of Diodes Incorporated.
SBR30A60
Document number: DS30982 Rev. 9 - 2
2 of 5
www.diodes.com
August 2012
© Diodes Incorporated
SBR30A60CT
SBR30A60CTFP
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
60 V
Average Rectified Output Current @ T
C
= +110ºC I
O
30 A
Non-Repetitive Avalanche Energy
(T
J
= +25ºC, I
AS
= 20A, L = 8.5mH, tp = 1ms)
E
AS
400 mJ
Repetitive Peak Avalanche Energy (1µs, +25ºC) P ARM
8600 W
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
250 A
Peak Repetitive Reverse Surge Current (2µS - 1Khz) I
RRM
3 A
Isolation Voltage (ITO-220AB Only)
From terminal to heatsink t = 3 sec.
V
AC
2000 V
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance (per leg)
Thermal Resistance Junction to Ambient (Note 6)
Thermal Resistance Junction to Case (Note 6)
R θJA
R θJC
10.6
0.6
ºC/W
Operating and Storage Temperature Range T J , T STG
-65 to +150 ºC
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop V
F
-
-
0.53
0.60
0.55
V
I
F
= 15A, T
J
= +25ºC
I
F
= 15A, T
J
= +125ºC
Leakage Current (Note 7) I
R
- -
0.5
60
mA
V
R
= 60V, T
J
= +25ºC
V
R
= 60V, T
J
= +125ºC
Notes: 6. Test Device on Heatsink (Black Aluminum, 37mm * 50mm* 15mm)
7. Short duration pulse test used to minimize self-heating effect.
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25
I , AVERAGE FORWARD CURRENT (A)
Fig. 1 Forward Power Dissipation
F(AV)
P
P
O
WE
R
DIS
S
IP
A
T
IO
N
(W
)
D
0.0001
0.001
0.01
0.1
1
10
100
0 200 400 600 800
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics
F
I
, INS
T
AN
T
ANE
O
U
S F
O
R
WA
R
D
C
U
R
R
EN
T
(A
)
F