Diodes SBR3U100LP - Manual (Page 2)

SBR is a registered trademark of Diodes Incorporated.
SBR3U100LP
Document number: DS30998 Rev. 8 - 2
2 of 5
www.diodes.com
October 2012
© Diodes Incorporated
SBR3U100LP
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
100 V
RMS Reverse Voltage V
R(RMS)
70 V
Average Rectified Output Current I
O
3.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
32 A
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance Junction to Ambient (Note 5) T
A
= +25ºC R
θJA
61 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(BR)R
100 - - V I
R
= 0.2mA
Forward Voltage V
F
- - 0.79 V I
F
= 3.0A, T
J
= +25ºC
Reverse Current (Note 6) I
R
-
- 16
3
200
15
µA
mA
V
R
= 100V, T
J
= +25ºC
V
R
= 100V, T
J
= +125ºC
Notes: 5. Device mounted on Polyimide substrate, 2 oz. Copper, 75mm 2 pad area, double side PCB.
6. Short duration pulse test used to minimize self-heating effect.