Diodes SBRT25U60SLP - Manual (Page 2)

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SBR25U60SLP
Document number: DS36714 Rev. 4 - 2
2 of 5
www.diodes.com
January 2014
© Diodes Incorporated
SBRT25U60SLP
NEW PROD
UC
T
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
60 V
Average Rectified Output Current I
O
25 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
220 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 5) R
θJA
10 °C/W
Typical Thermal Resistance Junction to Case (Note 5) R
θJC
0.5 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop (Note 6) V
F
—
—
0.40
0.49
0.48 0.45
0.55
—
V
I
F
= 12.5A, T
J
= +25°C
I
F
= 25A, T
J
= +25°C
I
F
= 25A, T
J
= +125°C
Leakage Current (Note 6) I
R
—
— 0.17
—
0.40
80
mA
V
R
= 60V, T
J
= +25°C
V
R
= 60V, T
J
= +125°C
Notes: 5. Device with additional heatsink, (Al substrate with copper pad 30mm*30mm + Black Aluminum 80mm*48mm*35mm)
6. Short duration pulse test used to minimize self-heating effect.
0
2
4
6
8
10
12
14
0 5 10 15 20 25 30
I AVERAGE FORWARD CURRENT (A)
Figure 1 Forward Power Dissipation
F(AV)
P
,
P
O
WE
R
DI
S
S
IP
A
T
IO
N
(W
)
D
0.01
0.1
1
10
100
0 100 200 300 400 500 600
I,
IN
S
TA
N
TA
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 2 Typical Forward Characteristics