Diodes SBRT25U80SLP - Manual (Page 2)

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SBRT25U80SLP
Document number: DS36715 Rev. 3 - 2
2 of 5
www.diodes.com
March 2014
© Diodes Incorporated
SBRT25U80SLP
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
80 V
Average Rectified Output Current I
O
25 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
200 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 5) R
θJA
9 °C/W
Typical Thermal Resistance Junction to Case (Note 5) R
θJC
2 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop (Note 6) V
F
—
— 0.43
0.55 —
0.61
V
I
F
= 12.5A, T
J
= +25°C
I
F
= 25A, T
J
= +25°C
Leakage Current (Note 6) I
R
—
— 0.18
—
0.5
80
mA
V
R
= 80V, T
J
= +25°C
V
R
= 80V, T
J
= +125°C
Notes: 5. Device mounted on aluminum substrate 2oz, 2inch sq. and additional aluminum heatsink 50mm*50mm*23mm
6. Short duration pulse test used to minimize self-heating effect.
I , AVERAGE RECTIFIED OUTPUT CURRENT (A)
Figure 1 Forward Power Dissipation
O
P
, P
O
WE
R
DI
SSI
P
A
T
IO
N
(W
)
D
0
2
4
6
8
10
12
14
16
0 2 4 6 8 10 12 14 16 18 20 22 24 26
T = 150
J
Note 5
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
Figure 2 Typical Forward Characteristics
I
, INS
TAN
TANE
O
U
S F
O
R
WA
R
D
C
U
R
R
EN
T
(A
)
F
0.001
0.01
0.1
1
10
100
0 100 200 300 400 500 600
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A