Diodes SBRT3U40P1 - Manual (Page 2)

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SBRT3U40P1
Document number: DS36535 Rev. 4 - 2
2 of 5
www.diodes.com
January 2014
© Diodes Incorporated
SBRT3U40P1
NEW PROD
UC
T
ADVANCED INFORMATION ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
40 V
Average Rectified Output Current I
O
3 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
75 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 5) R
θJA
78 °C/W
Typical Thermal Resistance Junction to Case (Note 5) R
θJC
19 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop V
F
—
—
0.34
0.25
0.42
0.37 0.39
—
0.49
—
V
I
F
= 1A, T
J
= +25°C
I
F
= 1A, T
J
= +125°C
I
F
= 3A, T
J
= +25°C
I
F
= 3A, T
J
= +125°C
Leakage Current (Note 6) I
R
—
— 30
7
180
40
μA
mA
V
R
= 40V, T
J
= +25°C
V
R
= 40V, T
J
= +125°C
Notes: 5. Device mounted on 1 inch FR4.
6. Short duration pulse test used to minimize self-heating effect.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 1 2 3 4 5 6
I AVERAGE FORWARD CURRENT (A)
Figure 1 Forward Power Dissipation
F(AV) P
, A
V
E
R
A
G
E
F
O
R
WA
R
D
P
O
WE
R
D
ISSI
P
A
T
IO
N
(W
)
F(
A
V
)
0.0001
0.001
0.01
0.1
1
10
0 100 200 300 400 500 600
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 2 Typical Forward Characteristics
I,
I
N
S
TAN
TAN
E
O
U
S F
O
R
WA
R
D
C
U
R
R
EN
T
(A
)
F
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A