Diodes SD830 – SD860 User Manual

Product summary, Description and applications, Features and benefits

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SD830 – SD860

Document number: DS23006 Rev. 7 - 2

1 of 3

www.diodes.com

September 2013

© Diodes Incorporated

SD830 – SD860

8.0A SCHOTTKY BARRIER RECTIFIERS

Product Summary

@T

A

= +25°C

V

RRM

(V)

I

O

(A)

V

FMAX

(V)

I

RMAX

(μA)

30, 40, 60

8

0.7

100

Description and Applications

8.0 A Schottky Barrier Rectifier in DO-201AD package, offers high
current capability and low forward voltage drop, designed with Guard
Ring for Transient Protection and high surge capacity.

Features and Benefits

High Current Capability and Low Forward Voltage Drop

High Surge Capacity

Guard Ring for Transient Protection

Low Power Loss, High Efficiency

Lead Free Finish, RoHS Compliant (Note 1 & 2)

Mechanical Data

Case: DO-201AD

Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish - Bright Tin. Solderable per MIL-STD-202,
Method 208

Polarity: Cathode band

Mounting Position: Any

Weight: 1.1 grams (approximate)

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.

Characteristic Symbol

SD830

SD840

SD860

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

V

RRM

V

RWM

V

RM

30 40

60 V

RMS Reverse Voltage

VR

(RMS)

21 28 42 V

Average Rectified Output Current (See Figure 1)

I

O

8 A

Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load

I

FSM

175 A


Thermal Characteristics

Characteristic Symbol

Value

Unit

Typical Thermal Resistance Junction to Lead (Note 3) T

A

= +25°C

R

θJL

30 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-65 to +150

°C


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

Forward Voltage Drop

V

F

– 0.55 0.7 V

I

F

= 8A, T

J

= +25°C

Leakage Current

I

R

– –

1.0

50

mA
mA

V

R

= V

RRM

, T

J

= +25°C

V

R

= V

RRM

, T

J

= +100°C

Typical Junction Capacitance (Note 4)

C

J

– 550 – pF

V

R

= 4V, f=1.0 MHz

Notes:

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exempltions applied.
2. See

http://www.diodes.com/quality/lead_free.html

for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”

and Lead-free.
3. Thermal resistance from junction to lead vertical PC board mounting, 9.5mm lead length.
4. Measured at 1.0MHz and applied reverse voltage of 4.0V.

Pb

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