Diodes ZHCS506 - Manual (Page 2)

ZHCS506
Document number: DS33217 Rev. 4 - 2
2 of 5
www.diodes.com
April 2014
© Diodes Incorporated
ZHCS506
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Continuous Reverse Voltage V
R
60 V
Continuous Forward Current I
F
500 mA
Forward Voltage @I
F
=500mA V
F
630 mV
Average Peak Forward Current; D.C. = 50% I
FAV
1000 mA
Non Repetitive Forward Current
t ≤ 100µs
I
FSM
5.5 A
t ≤ 10ms 2.5 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, T
A
= +25°C P
D
330 mW
Junction Temperature T
J
+125 °C
Storage Temperature Range T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V
(BR)R
60 80 — V I
R
= 200 μA
Forward Voltage (Note 5) V
F
— 275 310
mV
I
F
= 50mA
— 320 360 I
F
= 100mA
— 415 470 I
F
= 250mA
— 550 630 I
F
= 500mA
— 680 800 I
F
= 750mA
— 820 960 I
F
= 1A
— 1120 1350 I
F
= 1.5A
— 565 — I
F
= 500mA, T
A
= +100°C
Reverse Current I
R
— 20 40 μA V
R
= 45V
Diode Capacitance C
D
— 20 — pF f = 1MHz, V
R
= 25V
Reverse Recovery Time trr — 10 — ns
Switched from I
F
= 500mA to
I
R
= 500mA
Measured @ I
R
= 50mA
Note: 5. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle 2%.