Diodes ZHCS500 - Manual (Page 2)

ZHCS500
Document number: DS33216 Rev. 4 - 2
2 of 5
www.diodes.com
November 2012
© Diodes Incorporated
ZHCS500
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Continuous Reverse Voltage V
R
40 V
Continuous Forward Current I
F
500 mA
Forward Voltage @ I F = 500mA V F
550 mV
Average Peak Forward Current; D.C. = 50% I
FAV
1000 mA
Non Repetitive Forward Current
t
≤ 100µs
I
FSM
6.75 A
t
≤ 10ms
3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, T
A
= +25°C P
D
330 mW
Junction Temperature T
J
125 °C
Storage Temperature Range T
STG
-55 to +150 °C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V
(BR)R
40 60 — V I
R
= 200µA
Forward Voltage (Note 5) V
F
— 270 300
mV
I F = 50mA
— 300 350 I
F
= 100mA
— 370 460 I
F
= 250mA
— 465 550 I F = 500mA
— 550 670 I
F
= 750mA
— 640 780 I
F
= 1A
— 810 1050 I
F
= 1.5A
— 440 — I
F
= 500mA, T
A
= +100°C
Reverse Current I
R
— 15 40 µA V
R
= 30V
Diode Capacitance C
D
— 20 — pF f = 1MHz, V
R
= 25V
Reverse Recovery Time trr — 10 — ns
Switched from I F = 500mA to
I
R
= 500mA
Measured @ I
R
= 50mA
Notes: 5. Measured under pulsed conditions. Pulse width = 300 μS. Duty cycle – 2%.