Diodes ZLLS500 - Manual (Page 3)

ZLLS500
Document number: DS33227 Rev. 6 - 2
3 of 6
www.diodes.com
January 2012
© Diodes Incorporated
ZLLS500
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V (BR)R
40 - - V I R = 200
μA
Forward Voltage (Note 4) V F
- 305 360
mV
I
F
= 50mA
- 335 390 I
F
= 100mA
- 395 450 I F = 250mA
- 465 530 I
F
= 500mA
- 550 630 I
F
= 750mA
- 620 710 I
F
= 1A
- 710 800 I
F
= 1.5A
- 415 - I
F
= 500mA, T
A
= 100°C
Reverse Current I
R
- 6 10
μA
V
R
= 30V
- 370 - V R = 30V, T A = 85°C
Diode Capacitance C
D
- 16 - pF f = 1MHz, V
R
= 30V
Reverse Recovery Time trr - 3 - ns
Switched from I
F
= 500mA to
V
R
= 5.5V Measured @ I
R
= 50mA
di /d t = 500mA/ ns.
R
source
= 6
Ω; R
load
= 10
Ω
Reverse Recovery Charge Qrr - 210 - pC
Notes: 4. Measured under pulsed conditions. Pulse width = 300 μS. Duty cycle ≤ 2%.
Operational efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS series diodes in applications requiring higher voltage, higher temperature
operation. Circuits requiring low voltage low temperature operation will benefit from using Zetex low V
F
ZHCS series diodes.