Diodes SBR40U200CTB - Manual (Page 2)

SBR40U200CTB
Document number: DS31277 Rev. 6 - 2
2 of 4
www.diodes.com
July 2011
© Diodes Incorporated
SBR40U200CTB
SBR is a registered trademark of Diodes Incorporated.
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V RM
200 V
Average Rectified Output Current @ T
C
= 150ºC I
O
40 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
240 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance (per leg)
Thermal Resistance Junction to Case (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
R θJC
R θJA
2
7 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +175 ºC
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop (per leg) V
F
-
0.85
0.70 0.93
0.75
V
I
F
= 20A, T
J
= 25ºC
I
F
= 20A, T
J
= 125ºC
Leakage Current (Note 5) I
R
-
- -
- 0.2
40
mA
V
R
= 200V, T
J
= 25ºC
V R = 200V, T J = 125ºC
Reverse Recovery Time t rr
- 38 50
ns
I
F
= 0.5A, I
R
= 1A,
I
RR
= 0.25A
- 25 35
I
F
= 1A, V
R
= 30V
di/dt = 100A/ μs, T
J
= 25ºC
Notes: 4. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
Fig.1 Typical Forward Characteristics
0.001
0.01
0.1
1
10
100
0 200 400 600 800 1,000 1,200
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
I
, I
N
ST
ANT
A
NEOUS
F
O
RW
ARD
CURRENT
(A
)
F
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
0.1
1
10
100
1,000
10,000
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
I
, INST
A
N
T
A
NEOUS
REVE
RSE C
URRENT
(
µA
)
R
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A