Diodes SBR10U45SP5Q User Manual
Page 4
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBR10U45SP5Q
Document number: DS36358 Rev. 1 - 2
4 of 6
June 2013
© Diodes Incorporated
SBR10U45SP5Q
Notes:
8. Device mounted on FR-4 substate, 2oz copper, with minimum recommended pad layout.
9. Device mounted on FR-4 substate, 2oz copper, with 10cm x 10cm pad layout.
20
40
60
80
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
Figure 7 Pulse Derating Curve
J
0
P
, AVA
L
A
N
C
H
E
P
EA
K
P
U
LS
E
P
O
WE
R
DERA
T
ING PE
RCENT
AGE
(
%
)
ARM
100
120
0
100
1000
10000
100000
10.0
100.0
1000.0
10000.0
P
, M
AXI
M
U
M A
V
A
LA
N
C
H
E
P
O
WE
R
(W
)
AR
M
T , PULSE DURATION (µS)
P
Figure 8 Maximum Avalanche Power
100
200
300
400
500
600
700
800
0.00001
0.0001
0.001
0.01
0.1
1
0
P
,
P
EA
K
T
R
ANS
IEN
T
P
O
IW
E
R
(W
)
(P
K
)
t1, PULSE DURATION TIME (sec)
Figure 9 Single Pulse Maximum Power Dissipation
Single Pulse
R
= 78 C/W
R
= r * R
T - T = P * R
JA
JA(t)
(t)
JA
J
A
JA(t)
0.01
0.1
1
10
100
1,000
10,000
t1, PULSE DURATION TIMES (sec)
Figure 10 Transient Thermal Resistance
0.001
r(t
),
T
R
A
N
SI
E
N
T
T
H
E
R
MA
L
R
ES
IS
TA
N
C
E
0.01
0.1
1
R
(t) = r(t) * R
R
= 78°C/W
Duty Cycle, D = t1/ t2
JA
JA
JA
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse