Diodes SBR30A60CTBQ - Manual (Page 2)

SBR is a registered trademark of Diodes Incorporated.
SBR30A60CTBQ
Document number: DS36092 Rev. 3 - 2
2 of 5
www.diodes.com
June 2013
© Diodes Incorporated
SBR30A60CTBQ
NEW
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
60 V
Average Rectified Output Current I
O
30 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
180 A
Repetitive Peak Avalanche Power (1 μs, +25°C) P
ARM
6000 W
Non-Repetitive Avalanche Energy
(T
J
= +25°C, I
AS
= 12A, L = 10mH)
E
AS
600 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 5) R
θJC
9 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop V
F
-
- 0.57
0.55 0.63
-
V
I
F
= 15.0A, T
J
= +25°C
I
F
= 15.0A, T
J
= +125°C
Leakage Current (Note 6) I
R
-
- 0.11
40
0.33
-
mA
V
R
= 60V, T
J
= +25°C
V
R
= 60V, T
J
= +125°C
Notes: 5. Device mounted on Polymide substate, 125mm2 copper pad, double-sided, PC boards.
6. Short duration pulse test used to minimize self-heating effect.
7. Device mounted on Polymide substate, 125mm2 copper pad, double-sided, PC
boards.
0
2
4
6
8
10
12
14
0 5 10 15 20 25
I AVERAGE FORWARD CURRENT (A)
Figure 1 Forward Power Dissipation
F(AV)
P
, A
V
E
R
A
G
E
F
O
R
WA
R
D
P
O
WE
R
DI
SSI
P
A
T
IO
N (
W
)
F(
A
V
)
0.0001
0.001
0.01
0.1
1
10
100
0 200 400 600 800
Figure 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
I
,
IN
ST
ANT
A
N
E
OUS F
O
R
W
ARD
CUR
RENT
(
A
)
F