Diodes QSBT40 - Manual (Page 2)

QSBT40
Document number: DS30195 Rev. 16 - 2
2 of 4
www.diodes.com
September 2012
© Diodes Incorporated
QSBT40
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
30 V
Forward Continuous Current (Note 6) I
FM
200 mA
Non-Repetitive Peak Forward Surge Current @ t < 1.0s I
FSM
600 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6) P
D
200 mW
Thermal Resistance Junction to Ambient Air (Note 6) R θJA 625 °C/W
Operating Temperature Range T
J
-55 to +125 °C
Storage Temperature Range T
STG
-65 to +125 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V (BR)R
30 ⎯ ⎯ V I R = 100
μA
Forward Voltage V
F
⎯ ⎯
280
350
450
550
1000
mV
I
F
= 0.1mA, tp < 300µS
I
F
= 1.0mA, tp < 300µS
I
F
= 10mA, tp < 300µS
I
F
= 30mA, tp < 300µS
I
F
= 100mA, tp < 300µS
Reverse Current (Note 7) I
R
⎯ ⎯ 2 μA
V
R
= 25V
Total Capacitance C
T
⎯
10.0
6.5
⎯ pF
V
R
= 0, f = 1.0MHz (Note 8)
V
R
= 0, f = 1.0MH
Z
(Note 9)
Reverse Recovery Time t
rr
⎯ ⎯ 5.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100 Ω
Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
8. At V
R
= 0V, DL(X) to V
CC
or GND.
9. At V
R
= 0V, between Data Lines (e.g., DL1 and DL4).
0
50
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISS
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
100
150
200
0