Diodes SBR02M30LP User Manual

Sbr02m30lp, New product, Features

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SBR02M30LP


0.2A SBR

®

SUPER BARRIER RECTIFIER

NEW PRODUCT

SBR is a registered trademark of Diodes Incorporated.

Features

•

Ultra Low Leakage Current

•

Excellent High Temperature Stability

•

Patented Super Barrier Rectifier Technology

•

Soft, Fast Switching Capability

•

175ºC Operating Junction Temperature

•

Lead Free Finish, RoHS Compliant (Note 1)

•

“Green” Molding Compound (No Br, Sb)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: DFN1006-2

•

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Polarity Indicator: Cathode Dot

•

Terminals: Finish - NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.001 grams (Approximate)








Top View

Bottom View

Maximum Ratings

@T

A

= 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.

Characteristic Symbol

Value

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

V

RRM

V

RWM

V

RM

30 V

RMS Reverse Voltage

V

R(RMS)

21 V

Average Rectified Output Current (See Figure 1)

I

O

0.2 A

Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load

I

FSM

5.0 A

Thermal Characteristics

Characteristic Symbol

Value

Unit

Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 2)
Thermal Resistance Junction to Ambient (Note 3)

R

θJS

R

θJA

18

263

ºC/W

Operating and Storage Temperature Range

T

J

, T

STG

-65 to +175

ºC

Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit Test

Condition

Reverse Breakdown Voltage (Note 4)

V

(BR)R

30 - - V

I

R

= 400µA

Forward Voltage Drop

V

F

-

0.50
0.42
0.57
0.51

0.54
0.45
0.61
0.54

V

I

F

= 0.1A, T

J

= 25ºC

I

F

= 0.1A, T

J

= 150ºC

I

F

= 0.2A, T

J

= 25ºC

I

F

= 0.2A, T

J

= 150ºC

Leakage Current (Note 4)

I

R

-

0.1

46

0.5

150

µA

V

R

= 30V, T

J

= 25ºC

V

R

= 30V, T

J

= 150ºC

Notes:

1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.

2. Theoretical R

θJS

calculated from the top center of the die straight down to the PCB cathode tab solder junction.

3. FR-4 PCB, 2oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.

4. Short duration pulse test used to minimize self-heating effect.







SBR02M30LP

Document number: DS31061 Rev. 5 - 2

1 of 3

www.diodes.com

March 2008

© Diodes Incorporated

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