Diodes ZHCS350 - Manual (Page 2)

ZHCS350
Document number: DS33214 Rev. 3 - 2
2 of 5
www.diodes.com
June 2012
© Diodes Incorporated
ZHCS350
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Continuous Reverse Voltage V
R
40 V
Continuous Forward Current I
F
350 mA
Average Peak Forward Current; D.C. = 50% I
FAV
510 mA
Non Repetitive Forward Current
t
≤ 100μs
I
FSM
4.2 A
t ≤ 10ms 910 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, T
A
= 25°C
(Note 5)
P
D
285
mW
(Note 6) 330
Thermal Resistance, Junction to Ambient
(Note 5)
R θJA
350
(Note 6) 303
Junction Temperature T
J
125 °C
Storage Temperature Range T
STG
-55 to +150 °C
Notes: 5. For a single device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of 1oz copper in still air conditions.
6. As Note 5, measured at t ≤ 5 secs.
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V
(BR)R
40 60 - V I
R
= 100 μA
Forward Voltage (Note 7) V
F
- 300 325
mV
I
F
= 30mA
- 335 370 I
F
= 50mA
- 405 460 I
F
= 100mA
- 730 810 I
F
= 350mA
Reverse Current I R
- 7 12 μA
V R = 30V
Diode Capacitance C
D
- 3.3 6 pF f = 1MHz, V
R
= 25V
Reverse Recovery Time trr - 1.6 - ns
Switched from I
F
= 100mA to
I
R
= 100mA
Measured @ I
R
= 10mA
Notes: 7. Measured under pulsed conditions. Pulse width = 300 μS. Duty cycle ≤ 2%.